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US 11,688,800 B2Granted
High electron mobility transistor and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsKuo-Hsing Lee, Sheng-Yuan Hsueh, Chien-Liang Wu, Kuo-Yu Liao
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Abstract
A semiconductor device includes a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, a first mesa isolation on the HEMT region, a HEMT on the first mesa isolation, a second mesa isolation on the capacitor region, and a capacitor on the second mesa isolation. The semiconductor device further includes buffer layer between the substrate, the first mesa isolation, and the second mesa isolation, in which bottom surfaces of the first mesa isolation and the second mesa isolation are coplanar.
Claims8
A semiconductor device, comprising:
- a substrate having a high electron mobility transistor (HEMT) region and a capacitor region;
- a first mesa isolation on the HEMT region;
- a HEMT on the first mesa isolation;
- a second mesa isolation on the capacitor region, wherein top surfaces of the first mesa isolation and the second mesa isolation are coplanar;
- a hard mask on the first mesa isolation and the second mesa isolation, wherein the hard mask contacts sidewalls of the first mesa isolation and the second mesa isolation and bottom surfaces of the hard mask and the second mesa isolation are coplanar;
- and
- a capacitor on the second mesa isolation, wherein the capacitor comprises:
- a bottom electrode on the hard mask;
- a capacitor dielectric layer on the bottom electrode and extending to the hard mask on the HEMT region;
- and
- a top electrode on the capacitor dielectric layer.
8 more elements
Dependencies are inferred from the claim text.