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US 11,688,796 B2Granted
Gate all around fin field effect transistor
AssigneeInternational Business Machines Corporation
InventorEffendi Leobandung
Life of this patent
Estimating the term…
Abstract
Semiconductor devices include a semiconductor fin on a substrate. The semiconductor fin has channel region and source and drain regions. A gate stack is formed all around the channel region of the semiconductor fin, such that the channel region of the semiconductor fin is separated from the substrate. An interlayer dielectric is formed around the gate stack. At least a portion of the gate stack is formed in an undercut beneath the interlayer dielectric.
Claims20
A semiconductor device, comprising:
- a semiconductor fin on a substrate, the semiconductor fin comprising a channel region and source and drain regions;
- a gate stack formed all around the channel region of the semiconductor fin, such that the channel region of the semiconductor fin is separated from the substrate;
- and
- an interlayer dielectric formed around the gate stack, wherein at least a portion of the gate stack extends laterally past a sidewall of the interlayer dielectric.
1 more element
A semiconductor device, comprising:
- a semiconductor fin on a substrate, the semiconductor fin comprising a channel region and source and drain regions;
- a shallow trench isolation structure formed on the substrate around the channel region of the semiconductor fin;
- a gate stack, including a gate dielectric and a gate conductor, formed all around the channel region of the semiconductor fin and over the shallow trench isolation structure, such that the channel region of the semiconductor fin is separated from the substrate;
- and
- an interlayer dielectric formed around the gate stack, wherein at least a portion of the gate stack extends laterally past a sidewall of the interlayer dielectric.
2 more elements
A semiconductor device, comprising:
- a semiconductor fin on a substrate, the semiconductor fin comprising a channel region and source and drain regions;
- a shallow trench isolation structure formed on the substrate around the channel region of the semiconductor fin without extending directly underneath the channel region of the semiconductor fin;
- a gate stack, including a gate dielectric and a gate conductor, that completely encircles the channel region of the semiconductor fin and that is formed over the shallow trench isolation structure, such that the channel region of the semiconductor fin is separated from the substrate;
- and
- an interlayer dielectric formed on the shallow trench isolation structure and around the gate stack, wherein at least a portion of the gate stack extends laterally past a sidewall of the interlayer dielectric.
2 more elements
Dependencies are inferred from the claim text.