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US 11,688,794 B2Granted
Method for epitaxial growth and device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Hsiang Hsu, Ting-Yeh Chen, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen
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Abstract
A semiconductor device includes first and second semiconductor fins extending from a substrate and a source/drain region epitaxially grown in recesses of the first and second semiconductor fins. A top surface of the source/drain region is higher than a surface level with top surfaces of the first and second semiconductor fins. The source/drain region includes a plurality of buffer layers. Respective layers of the plurality of buffer layers are embedded between respective layers of the source/drain region.
Claims20
A semiconductor device, comprising:
- a first semiconductor fin and a second semiconductor fin, the first semiconductor fin and the second semiconductor fin extending from a substrate;
- a gate electrode over the first semiconductor fin and the second semiconductor fin;
- and
- a source/drain region adjacent to the gate electrode and over the first semiconductor fin and the second semiconductor fin, wherein a top surface of the source/drain region is higher than a top surface of the first semiconductor fin and the second semiconductor fin under the gate electrode, wherein the source/drain region comprises a plurality of buffer layers and a plurality of body layers, wherein the source/drain region comprises alternating layers of a buffer layer of the plurality of buffer layers and a body layer of the plurality of body layers, wherein a lower sidewall of a first body layer of the plurality of body layers is covered by a second body layer of the plurality of body layers, wherein at least one body layer of the plurality of body layers is free of facets.
1 more element
A semiconductor device, comprising:
- a first semiconductor fin and a second semiconductor fin extending from a substrate;
- and
- a first source/drain region on the first semiconductor fin and a second source/drain region on the second semiconductor fin, wherein the first source/drain region is separated from the second source/drain region, wherein top surfaces of the first source/drain region and the second source/drain region are higher than top surfaces of the first semiconductor fin and the second semiconductor fin, wherein the first source/drain region and the second source/drain region each comprise:
- a first buffer layer, the first buffer layer having a first germanium concentration;
- a first body layer over the first buffer layer, the first body layer having a second germanium concentration, the second germanium concentration being greater than the first germanium concentration;
- a second buffer layer over the first body layer, the second buffer layer having a third germanium concentration smaller than the second germanium concentration;
- and
- a second body layer over the second buffer layer, the second body layer covering outer sidewalls of the second buffer layer, the second body layer having a fourth germanium concentration greater than the third germanium concentration.
5 more elements
A semiconductor device, comprising:
- a first semiconductor fin, the first semiconductor fin extending from a substrate;
- a second semiconductor fin, the second semiconductor fin extending from the substrate;
- a source/drain region, comprising:
- a first body layer on the first semiconductor fin and the second semiconductor fin, a first portion of the first body layer physically contacting the first semiconductor fin and a second portion of the first body layer physically contacting the second semiconductor fin;
- a first buffer layer on the first body layer;
- a second body layer on the first buffer layer, the second body layer extending over the first portion of the first body layer and the second portion of the first body layer;
- and
- a second buffer layer on the second body layer, the second buffer layer covering a top surface of the second body layer, sidewalls of the second body layer being free of the second buffer layer;
- and
- a spacer under the second body layer, an air gap being between the spacer and the second body layer.
7 more elements
Dependencies are inferred from the claim text.