Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Yi Lee, Cheng-Lung Hung, Chi On Chui
Life of this patent
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Abstract
In an embodiment, a device includes: a first channel region; a second channel region; and a gate structure around the first channel region and the second channel region, the gate structure including: a gate dielectric layer; a first p-type work function metal on the gate dielectric layer, the first p-type work function metal including fluorine and aluminum; a second p-type work function metal on the first p-type work function metal, the second p-type work function metal having a lower concentration of fluorine and a lower concentration of aluminum than the first p-type work function metal; and a fill layer on the second p-type work function metal.
Claims20
A device comprising:
- a first channel region;
- a second channel region;
- and
- a gate structure around the first channel region and the second channel region, the gate structure comprising:
- a gate dielectric layer;
- a first p-type work function metal on the gate dielectric layer, the first p-type work function metal comprising fluorine and aluminum;
- a second p-type work function metal on the first p-type work function metal, the second p-type work function metal having a lower concentration of fluorine and a lower concentration of aluminum than the first p-type work function metal;
- and
- a fill layer on the second p-type work function metal.
A device comprising:
- a channel region;
- an interfacial layer on the channel region;
- a high-k gate dielectric layer on the interfacial layer;
- a first work function tuning layer on the high-k gate dielectric layer, the first work function tuning layer comprising a first p-type work function metal, aluminum in the first p-type work function metal, and fluorine in the first p-type work function metal;
- a second work function tuning layer on the first work function tuning layer, the second work function tuning layer comprising a second p-type work function metal, the second work function tuning layer free from fluorine and aluminum;
- an adhesion layer on the second work function tuning layer;
- and
- a fill layer on the adhesion layer.
A method comprising:
- depositing a gate dielectric layer on a channel region;
- depositing a first p-type work function metal on the gate dielectric layer;
- performing an aluminum treatment on the first p-type work function metal;
- after performing the aluminum treatment, performing a fluorine treatment on the first p-type work function metal;
- and
- after performing the fluorine treatment, depositing a second p-type work function metal on the first p-type work function metal.
Dependencies are inferred from the claim text.