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US 11,688,785 B2Granted
Metal semiconductor contacts
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsYudi Setiawan, Handoko Linewih
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Abstract
A semiconductor device is provided. The semiconductor device comprises a substrate having a first surface and a second surface, the substrate comprising a wide bandgap semiconductor material. An epitaxial layer is on the first surface of the substrate and a metal germanosilicide layer is above the second surface of the substrate. The metal germanosilicide layer forms an ohmic contact to the substrate.
Claims18
A semiconductor device comprising:
- a substrate having a first surface and a second surface, the substrate comprising a wide bandgap semiconductor material of silicon carbide;
- an epitaxial layer on the first surface of the substrate;
- and
- a first layer of metal germanosilicide compound on the second surface of the substrate, wherein the first layer of metal germanosilicide compound is continuous, has a uniform thickness, and forms an ohmic contact to the substrate.
1 more element
A semiconductor device comprising:
- a substrate having a first surface and a second surface, the substrate comprising a wide bandgap semiconductor material of silicon carbide;
- an epitaxial layer on the first surface of the substrate;
- a first layer of metal germanosilicide compound on the second surface of the substrate, wherein the first layer of metal germanosilicide compound is continuous, has a uniform thickness, and forms an ohmic contact to the substrate;
- and
- a second layer of metal germanosilicide compound above the epitaxial layer, wherein the second layer of metal germanosilicide compound forms an ohmic contact to the epitaxial layer.
2 more elements
A method of fabricating a semiconductor device comprising:
- forming a layer of metal germanosilicide compound on a substrate, wherein the substrate comprises a wide bandgap semiconductor material of silicon carbide having a first surface and a second surface;
- and
- forming an epitaxial layer on the first surface of the substrate, the layer of metal germanosilicide compound is formed on the second surface of the substrate, and the layer of metal germanosilicide compound is continuous, has a uniform thickness, and forms an ohmic contact to the substrate.
Dependencies are inferred from the claim text.