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US 11,688,777 B2Granted
Semiconductor device and inverter
AssigneeInfineon Technologies Austria AG
InventorsOliver Haeberlen, Eric G. Persson, Reenu Garg
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Abstract
In an embodiment, a semiconductor device is provided that includes a lateral transistor device having a source, a drain and a gate, and a monolithically integrated capacitor coupled between the gate and the drain.
Claims16
A semiconductor device, comprising:
- a lateral transistor device having a source, a drain and a gate;
- and
- a monolithically integrated additional capacitor coupled between the gate and the drain and that is also coupled in parallel with the inherent gate drain capacitance CGD of the lateral transistor device,
- wherein the semiconductor device has a reverse transfer capacitance Crss,
- wherein Crss(Vds=0V)/Crss(Vds=400V)<50,
- wherein Vas is the drain-source voltage of the lateral transistor device,
- wherein the additional capacitor has a capacitance CM that is greater than CGD.
4 more elements
Dependencies are inferred from the claim text.