Method of increasing forward biased safe operating area using different threshold voltage segments
AssigneeInfineon Technologies Americas Corp.
InventorPraveen Shenoy
Life of this patent
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Abstract
A method for increasing a forward biased safe operating area of a device includes forming a gate; and forming a segmented source close to the gate, wherein the segmented source includes first segments associated with a first threshold voltage and second segments associated with a second threshold voltage different from the first threshold voltage, wherein at least one device characteristic associated with the first segments is different from the same device characteristic associated with the second segments.
Claims17
A method of forming a device, the method comprising:
- forming a gate;
- and
- forming a segmented source proximate to the gate, wherein the segmented source comprises a plurality of first segments associated with a first threshold voltage and a plurality of second segments associated with a second threshold voltage different from the first threshold voltage, wherein at least two device characteristics associated with the plurality of first segments is different from the at least two device characteristics associated with the plurality of second segments,
- wherein the device comprises a laddered source transistor.
A method of forming a device, the method comprising forming a segmented source proximate to a gate of the device, wherein the segmented source comprises a plurality of first segments associated with a first threshold voltage and a plurality of second segments associated with a second threshold voltage different from the first threshold voltage, wherein at least two device characteristics associated with the plurality of first segments is different from the at least two device characteristics associated with the plurality of second segments, wherein the device comprises a checkered source transistor.
A method of forming a device, the method comprising forming a segmented source proximate to a gate of the device, wherein the segmented source comprises a plurality of first segments formed with an angled source implant and a plurality of second segments formed without the angled source implant, wherein at least two device characteristics associated with the plurality of first segments is different from the at least two device characteristics associated with the plurality of second segments, wherein the device comprises a laddered source transistor.
Dependencies are inferred from the claim text.