Semiconductor device with cap element
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShing-Huang Wu, Jian-Shian Chen
Life of this patent
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a source/drain structure adjacent to the gate stack. The semiconductor device structure also includes a cap element over the source/drain structure. The cap element has a first top plane, and the source/drain structure has a second top plane. The first top plane of the cap element is wider than the second top plane of the source/drain structure. A surface orientation of the first top plane of the cap element and a surface orientation of a side surface of the cap element are different from each other. The surface orientation of the first top plane of the cap element is {311}.
Claims20
A semiconductor device structure, comprising:
- a gate stack over a semiconductor substrate;
- a source/drain structure adjacent to the gate stack;
- and
- a cap element over the source/drain structure, wherein:
- the cap element has a first top plane,
- the source/drain structure has a second top plane,
- the first top plane of the cap element is substantially parallel to the second top plane of the source/drain structure,
- the cap element has a first thickness measured between the first top plane and the second top plane, the cap element has a second thickness measured between the side surface of the cap element and a side surface of the source/drain structure, and the first thickness and the second thickness are different from each other,
- the first top plane of the cap element is wider than the second top plane of the source/drain structure, and
- a surface orientation of the first top plane of the cap element and a surface orientation of a side surface of the cap element are different from each other, and the surface orientation of the first top plane of the cap element is {311}.
A semiconductor device structure, comprising:
- a gate stack over a semiconductor substrate;
- a first source/drain structure adjacent to the gate stack;
- and
- a cap element over the first source/drain structure;
- a second source/drain structure adjacent to the first source drain structure;
- a second cap element over the second source/drain structure, wherein a shortest distance between the cap element and the second cap element to smaller than a width of a top plane of the cap element;
- and
- an isolation feature between the first source/drain structure and the second source/drain structure.
A semiconductor device structure, comprising:
- a gate stack over a semiconductor substrate;
- a source/drain structure adjacent to the gate stack;
- and
- a second source/drain structure adjacent to the source/drain structure;
- a second cap element over the second source/drain structure;
- and
- a cap element over the source/drain structure, wherein:
- the cap element has a first top plane,
- the source/drain structure has a second top plane,
- the first top plane of the cap element is wider than the second top plane of the source/drain structure, and
- a ratio of a shortest distance between the cap element and the second cap element to a width of the first top plane of the cap element is in a range from about 0.6 to about 0.8.
Dependencies are inferred from the claim text.