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US 11,688,766 B2Granted
Seal material for air gaps in semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShuen-Shin Liang, Chen-Han Wang, Keng-Chu Lin, Tetsuji Ueno, Ting-Ting Chen
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Abstract
The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.
Claims20
A semiconductor device, comprising:
- a gate electrode on a fin region;
- a source/drain (S/D) structure on the fin region;
- an etch stop layer on a sidewall of the S/D structure;
- a seal layer between the gate electrode and the etch stop layer, wherein the seal layer comprises a silicon carbide material doped with oxygen;
- and
- an air gap in physical contact with the etch stop layer and surrounded by the seal layer, the fin region, the gate electrode, and the S/D structure.
3 more elements
A semiconductor device, comprising:
- a gate structure on a fin region, comprising;
- a gate electrode;
- and
- a first self-aligned contact (SAC) formed on the gate electrode;
- a source/drain (S/D) contact;
- a second SAC formed on the S/D contact;
- a seal layer comprising a silicon carbide material doped with oxygen, wherein the seal layer further comprises:
- a first portion between the gate structure and the S/D contact;
- and
- a second portion on top surfaces of the first SAC and the second SAC;
- and
- an air gap surrounded by the seal layer, the fin region, the gate electrode, and the S/D contact.
9 more elements
A method for forming a semiconductor device, comprising:
- forming an opening between a gate structure and a source/drain (S/D) structure of the semiconductor device, wherein the gate structure comprises a gate dielectric layer;
- and
- forming a seal layer on the opening between the gate structure and the S/D structure, comprising:
- depositing a silicon carbide material in the opening to form a first portion of the seal layer, wherein the first portion of the seal layer entraps a pocket of air in the opening between the gate dielectric layer and the S/D structure;
- depositing the silicon carbide material on top surfaces of the gate structure and the S/D structure to form a second portion of the seal layer;
- and
- performing an oxygen anneal process on the seal layer.
4 more elements
Dependencies are inferred from the claim text.