Semiconductor structure and method of forming same
AssigneeFujian Jinhua Integrated Circuit Co., Ltd.
InventorsYu-Cheng Tung, Yun-Fan Chou, Te-Hao Huang, Hsien-Shih Chu, Feng-Ming Huang
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Abstract
A semiconductor structure and a method of forming the semiconductor structure are disclosed. Through forming an electrically conductive structure on a trench isolation structure, utilization of a space above the trench isolation structure is achievable, which can reduce the space required in a semiconductor integrated circuit to accommodate the electrically conductive structure, thus facilitating dimensional shrinkage of the semiconductor integrated circuit.
Claims19
A semiconductor structure, comprising:
- a trench isolation structure formed in an isolation trench in a substrate, wherein at least part of a top surface of the trench isolation structure is lower than a top surface of the substrate;
- an electrically conductive structure formed over the trench isolation structure in the substrate and filling the isolation trench, the electrically conductive structure comprising a first conductive layer and a second conductive layer, the first conductive layer filling the isolation trench and extending beyond the isolation trench, the second conductive layer formed on the first conductive layer, each of the first and second conductive layers having a top surface portion that is in correspondence with the isolation trench and defines a recess;
- and
- a masking layer formed on the second conductive layer of the electrically conductive structure, wherein a portion of the masking layer corresponding with the recess in the second conductive layer delimits a void with the recess in the second conductive layer.
A semiconductor structure, comprising:
- a trench isolation structure disposed in a substrate, wherein at least a part of a top surface of the trench isolation structure is lower than a top surface of the substrate;
- an electrically conductive structure disposed on the trench isolation structure, the electrically conductive structure comprising a conductive layer extending beyond the trench isolation structure;
- and
- a masking layer disposed on the conductive layer of the electrically conductive structure, wherein a void is disposed in the masking layer, and is sandwiched by the masking layer and the conductive layer.
A semiconductor structure, comprising:
- a trench isolation structure disposed in a substrate, wherein at least a part of a top surface of the trench isolation structure is lower than a top surface of the substrate;
- an electrically conductive structure disposed on the trench isolation structure, the electrically conductive structure comprising a conductive layer extending beyond the trench isolation structure;
- a masking layer disposed on the conductive layer of the electrically conductive structure;
- and
- a void disposed over the substrate and the trench isolation structure, wherein the void is sequentially surrounded by the masking layer and the conductive layer in a horizontal direction.
Dependencies are inferred from the claim text.