Solid-state imaging device configured by electrically bonding the respective electrodes of a plurality of semiconductor chips

An imaging device, comprising:

• a first chip, including:
• first, second, third, and fourth pixels including respective first, second, third, and fourth photoelectric conversion regions that convert incident light into electric charge, wherein the first, second, third, and fourth pixels output pixel signals based on the electric charge;
• and
• a first connection region for bonding the first chip to a second chip and including a first connection portion overlapped with the first photoelectric conversion region in a plan view, and a second connection portion overlapped with the second photoelectric conversion region in the plan view,
• wherein the first photoelectric conversion region receives incident light of a first wavelength, and the second photoelectric conversion region receives incident light of a second wavelength that is greater than the first wavelength,
• wherein, in the plan view, an area of the first connection portion is larger than an area of the second connection portion, and
• wherein, in the plan view, the first connection region does not overlap the third photoelectric conversion region or the fourth photoelectric conversion region.