Different diffusion break structures for three-dimensional stacked semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsByounghak Hong, Seunghyun Song, Kang-ill Seo
Life of this patent
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Abstract
A multi-stack semiconductor device formed to cover a plurality of gate pitches includes: a 1st transistor; a 2nd transistor formed at a right side of the 1st transistor, and isolated from the transistor by a 1st portion of a diffusion break structure; a 3rd transistor formed vertically above or below the 1st transistor; and a 4th transistor formed at a right side of the 3rd transistor, and isolated from the 3rd transistor by a 2nd portion of the diffusion break structure, wherein the 1st portion and the 2nd portion of the diffusion break structure are formed of different material compositions or have different physical dimensions.
Claims12
A multi-stack semiconductor device formed to cover a plurality of gate pitches, comprising:
- a 1st transistor;
- a 2nd transistor formed at a right side of the 1st transistor, and isolated from the 1st transistor by a 1st portion of a diffusion break structure;
- a 3rd transistor formed vertically above or below the 1st transistor;
- and
- a 4th transistor formed at a right side of the 3rd transistor, and isolated from the 3rd transistor by a 2nd portion of the diffusion break structure, wherein the 1st portion of the diffusion break structure covers a space corresponding to approximately one gate pitch or more in a 1st direction, and the 2nd portion of the diffusion break structure covers a space corresponding to approximately one gate structure or dummy gate structure or less in the 1st direction.
A multi-stack semiconductor device formed to cover a plurality of gate pitches, comprising:
- a 1st transistor;
- a 2nd transistor formed at a right side of the 1st transistor, and isolated from the 1st transistor by a 1st portion of a diffusion break structure;
- a 3rd transistor formed vertically above or below the 1st transistor;
- and
- a 4th transistor formed at a right side of the 3rd transistor, and isolated from the 3rd transistor by a 2nd portion of the diffusion break structure,
- wherein the 1st portion and the 2nd portion of the diffusion break structure are formed of different material compositions or have different physical dimensions.
Dependencies are inferred from the claim text.