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US 11,688,737 B2Granted
Integrated circuit devices including vertical field-effect transistors
AssigneeSamsung Electronics Co., Ltd.
InventorsJung Ho Do, Seung Hyun Song
Life of this patent
Estimating the term…
Abstract
Integrated circuit devices including standard cells are provided. The standard cells may include a first vertical field effect transistor (VFET) including a first channel region and having a first conductivity type and a second VFET including a second channel region and having a second conductivity type that is different from the first conductivity type. Each of the first channel region and the second channel region may extend longitudinally in a first horizontal direction, and the first channel region may be spaced apart from the second channel region in a second horizontal direction that is perpendicular to the first horizontal direction.
Claims19
A standard cell comprising:
- a first vertical field effect transistor (VFET) comprising a first channel region and having a first conductivity type;
- and
- a second VFET comprising a second channel region and having a second conductivity type that is different from the first conductivity type,
- wherein each of the first channel region and the second channel region extends longitudinally in a first horizontal direction,
- the first channel region is spaced apart from the second channel region in a second horizontal direction that is perpendicular to the first horizontal direction, and
- the first VFET further comprises a first bottom source/drain region in a substrate, and the second VFET further comprises a second bottom source/drain region in the substrate, and
- wherein the standard cell further comprises:
- a first bottom contact contacting the first bottom source/drain region and extending parallel to the first channel region, wherein the first bottom contact is electrically connected to a drain voltage or a source voltage;
- and
- a second bottom contact contacting the second bottom source/drain region and extending parallel to the second channel region,
- wherein each of the first bottom contact and the second bottom contact extends longitudinally in the first horizontal direction.
8 more elements
A standard cell comprising:
- a first vertical field effect transistor (VFET) comprising a first bottom source/drain region in a substrate, a first channel region and a first top source/drain region sequentially stacked on the first bottom source/drain region in a vertical direction, wherein the first top source/drain region has a first conductivity type;
- a second VFET comprising a second bottom source/drain region in the substrate, a second channel region and a second top source/drain region sequentially stacked on the second bottom source/drain region in the vertical direction, wherein the second top source/drain region has a second conductivity type that is different from the first conductivity type;
- a common gate layer comprising a first portion that is on a side surface of the first channel region and is a first gate electrode of the first VFET and a second portion that is on a side surface of the second channel region and is a second gate electrode of the second VFET;
- and
- a gate contact that is between the first channel region and the second channel region and contacts the common gate layer,
- wherein each of the first channel region and the second channel region extends longitudinally in a first horizontal direction, and
- the gate contact is spaced apart from the first channel region in a second horizontal direction that is perpendicular to the first horizontal direction, and
- wherein the gate contact is overlapped by the first channel region and the second channel region in the second horizontal direction.
5 more elements
A standard cell comprising:
- a first vertical field effect transistor (VFET) having a first conductivity type, wherein the first VFET comprises two first channel regions that each extend longitudinally in a first horizontal direction;
- a second VFET having a second conductivity type that is different from the first conductivity type, wherein the second VFET comprises a second channel region, and the second channel region extends longitudinally in the first horizontal direction;
- and
- a third VFET having the first conductivity type, wherein the third VFET comprises a third channel region, and the third channel region extends longitudinally in a second horizontal direction that is perpendicular to the first horizontal direction.
1 more element
Dependencies are inferred from the claim text.