Quantum dot devices
AssigneeIntel Corporation
InventorsJames S. Clarke, Nicole K. Thomas, Zachary R. Yoscovits, Hubert C. George, Jeanette M. Roberts, Ravi Pillarisetty
Life of this patent
Estimating the term…
Abstract
Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gates above the quantum well stack; and a plurality of second gates above the quantum well stack; wherein the plurality of first gates are arranged in electrically continuous rows extending in a first direction, and the plurality of second gates are arranged in electrically continuous rows extending in a second direction perpendicular to the first direction.
Claims22
A quantum dot device, comprising:
- a quantum well stack;
- first gates above the quantum well stack;
- second gates above the quantum well stack;
- and
- an insulator material between a gate metal of the first gates and a gate metal of the second gates, wherein the gate metal of the first gates is between the insulator material and the quantum well stack.
A quantum dot device, comprising:
- a quantum well stack;
- a plurality of first gate lines in a first layer above the quantum well stack;
- and
- a plurality of second gate lines in a second layer above the quantum well stack, the second layer being closer to the quantum well stack than the first layer;
- and
- a gate dielectric between one of the first gate lines and each of two or more of the second gate lines,
- wherein the first gate lines are arranged in electrically continuous rows extending in a first direction, and the second gate lines are arranged in electrically continuous rows extending in a second direction perpendicular to the first direction.
A quantum dot device, comprising:
- a quantum well stack;
- a plurality of first gates above the quantum well stack;
- and
- a plurality of second gates above the quantum well stack,
- wherein, for at least a gate of the plurality of first gates, the gate is between a first nearest neighbor pair of second gates of the plurality of second gates, and the gate is between a second nearest neighbor pair of second gates of the plurality of second gates, the first nearest neighbor pair of second gates being nearest neighbors along a first direction, and the second nearest neighbor pair of second gates being nearest neighbors along a second direction, the second direction being different from the first direction.
Dependencies are inferred from the claim text.