Integrated thin film capacitors on a glass core substrate

A system comprising:

• a processor;
• a communication interface;
• and
• an integrated circuit device package, the integrated circuit device package comprising:
• an integrated circuit device coupled with one or more first conductive contacts on a first substrate surface;
• one or more second conductive contacts on a second substrate surface opposite the first substrate surface;
• a core layer comprising glass between the first and the second substrate surfaces;
• and
• one or more thin film capacitors on the glass core conductively coupled with one of the first conductive contacts and one of the second conductive contacts, wherein the thin film capacitor comprises a first metal layer on a surface of the glass core, a thin film dielectric material on a surface of the first metal layer, and a second metal layer on a surface of the thin film dielectric material, wherein the thin film dielectric material extends over two sides of both the first and the second metal layers, the thin film dielectric material contacting the surface of the glass core, wherein the first metal layer extends laterally further than the thin film dielectric material in one direction, and wherein the first and second metal layers are coupled with separate first conductive contacts on the first substrate surface, wherein the surface of the glass core comprises a first glass core surface and further comprising one or more thin film capacitors on a second glass core surface opposite the first glass core surface, further comprising an interlayer dielectric covering the one or more thin film capacitors on the surface of the glass core, and wherein the one or more thin film capacitors on the surface of the glass core are coplanar with the one or more first conductive contacts.