Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a substrate;
• a first transistor provided on the substrate;
• a memory cell array provided above the first transistor and including a plurality of electrode layers stacked in a first direction, and a source line layer provided above the plurality of electrode layers and including a doped semiconductor layer;
• a first plug provided above the first transistor, extending in the first direction, and electrically connected to the first transistor;
• and
• a metallic wiring layer provided above the memory array, connected to the source line layer, and including a first portion provided on the first plug, wherein
• the memory cell array includes a first region and a second region,
• the first region include a first pillar containing a first channel semiconductor layer and a second pillar containing a second channel semiconductor layer,
• the second region includes a third plug in contact with one of the plurality of electrode layers,
• the first channel semiconductor layer and the second channel semiconductor layer are in contact with the doped semiconductor layer,
• the metallic wiring layer includes, in the first region, a second portion and a third portion connected to the second portion,
• the second portion is in contact with the source line layer,
• the third portion is not in contact with the source line layer, and
• the second portion has a part located in a position in the first direction nearer to the uppermost layer of the plurality of electrode layers than the third portion.