Trench insulated gate bipolar transistor packaging structure and method for manufacturing the trench insulated gate bipolar transistor

A trench Insulated Gate Bipolar Transistor (IGBT) packaging structure, comprising:

• a trench IGBT, which comprises an emitting electrode, an emitting electrode metal layer electrically connected to the emitting electrode, and a trench gate electrode arranged on one side of the emitting electrode metal layer;
• a lead frame, which comprises an emitting electrode lead-out end and a chip placement area configured to fix the trench IGBT;
• and
• a first bonding wire connecting the emitting electrode metal layer and the emitting electrode lead-out end;
• wherein one end of the first bonding wire is connected to a surface, away from the trench gate electrode, of the emitting electrode metal layer to form a strip-shaped first solder joint, the other end of the first bonding wire is connected to the emitting electrode lead-out end to form a second solder joint, and an extension direction of the first solder joint is perpendicular to an extension direction of a trench of the trench gate electrode,
• wherein a part, between the first solder joint and the second solder joint, of the first bonding wire forms a curved portion, and an arc height from a highest point of the curved portion to the emitting electrode metal layer is 750 microns to 1000 microns,
• the extension direction of the first solder joint is a length direction of the first solder joint, the extension direction of the trench is an extending direction of a length of the trench, and the extension direction of the trench is perpendicular to a depth direction of the groove direction.