Semiconductor devices with shielding structures

A semiconductor device, comprising:

• a first die that comprises
• a semiconductor substrate with transistors formed on a first side of the semiconductor substrate;
• a connection structure extending through the semiconductor substrate and conductively connecting a first conductive layer disposed on the first side of the semiconductor substrate and a second conductive layer disposed on a second side of the semiconductor substrate that is opposite to the first side of the semiconductor substrate;
• and
• a shielding structure disposed in the semiconductor substrate and between the connection structure and at least a transistor, the shielding structure comprising a third conductive layer, the shielding structure having a cross section parallel to the first side of the semiconductor substrate, the cross section forming an enclosed region within which a through substrate contact formed in the semiconductor substrate is enclosed and outside of which the transistor is formed.