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US 11,688,693 B2Granted
Semiconductor packages and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Yu Chen, Chun-Chih Chuang, Kuan-Lin Ho, Yu-Min Liang, Jiun Yi Wu
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Abstract
A package includes an interposer structure free of any active devices. The interposer structure includes an interconnect device; a dielectric film surrounding the interconnect device; and first metallization pattern bonded to the interconnect device. The package further includes a first device die bonded to an opposing side of the first metallization pattern as the interconnect device and a second device die bonded to a same side of the first metallization pattern as the first device die. The interconnect device electrically connects the first device die to the second device die.
Claims18
A package comprising:
- an interposer structure free of any transistors, the interposer structure comprises:
- an interconnect device;
- a dielectric film surrounding the interconnect device;
- first metallization pattern bonded to the interconnect device;
- a second interconnect structure on an opposing side of the dielectric film as the first metallization pattern;
- and
- a through via extending through the dielectric film, wherein the through via electrically connects the second interconnect structure to the first metallization pattern;
- a first device die bonded to an opposing side of the first metallization pattern as the interconnect device;
- a second device die bonded to a same side of the first metallization pattern as the first device die, wherein the interconnect device electrically connects the first device die to the second device die, wherein the interconnect device overlaps both the first device die and the second device die, and wherein the first metallization pattern comprises:
- a first conductor extending continuously from a first connector of the first device die to a second connector of the interconnect device;
- and
- a second conductor extending continuously from a third connector of the second device die to a fourth connector of the interconnect device;
- and
- a core substrate bonded to an opposing side of the second interconnect structure as the dielectric film.
11 more elements
A package comprising:
- an interposer free of transistors, the interposer comprising:
- an interconnect device comprising:
- a semiconductor substrate;
- and
- a first interconnect structure on the semiconductor substrate;
- a passive device;
- a dielectric film burying the interconnect device and the passive device;
- a first metallization pattern over the dielectric film, the interconnect device, and the passive device, wherein the interconnect device is bonded to a first surface of the first metallization pattern by first solder regions, and the passive device is bonded to the first surface of the first metallization pattern by second solder regions;
- and
- a first underfill around the first solder regions, wherein the dielectric film surrounds and contacts the first underfill;
- a first device die directly bonded to a second surface of the first metallization pattern by third solder regions, wherein the first surface of the first metallization pattern is opposite to the second surface of the first metallization pattern;
- a second device die directly bonded to the second surface of the first metallization pattern by fourth solder regions, wherein electrical routing in the first interconnect structure electrically routes signals between the first device die and the second device die;
- and
- a core substrate directly bonded to an opposing side of the interposer as the first device die and the second device die, wherein the core substrate comprises:
- an insulating core material;
- a first metal cladding layer on a first side of the insulating core material;
- and
- a second metal cladding layer on a second side of the insulating core material opposite the first side of the insulating core material.
15 more elements
A semiconductor device comprising:
- an interconnect device bonded to a first surface of a first metallization structure, wherein the interconnect device is free of any transistors;
- a passive device bonded to the first surface of the first metallization structure, wherein the passive device is free of any transistors;
- a dielectric film around the interconnect device and the passive device;
- a first device die bonded to a second surface of the first metallization structure, wherein the second surface of the first metallization structure is opposite to the first surface of the first metallization structure;
- a second device die bonded to the second surface of the first metallization structure, wherein the interconnect device is electrically connected to both the first device die and the second device die such that the interconnect device electrically routes signals between the first device die and the second device die;
- and
- a core substrate bonded to an opposing side of the second metallization structure as the dielectric film, wherein the core substrate comprises:
- an insulating core material;
- a first metal cladding layer on a first side of the insulating core material, wherein the second metallization structure is directly bonded to the first metal cladding layer;
- a second metal cladding layer on a second side of the insulating core material opposite the first side of the insulating core material;
- and
- a second through via extending through the insulating core material, wherein the second through via electrically connects the first metal cladding layer to the second metal cladding layer.
9 more elements
Dependencies are inferred from the claim text.