Memory device including a landing pad with increased thickness of a conductive film in the landing area
AssigneeMacronix International Co., Ltd.
InventorErh-Kun Lai
Life of this patent
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a staircase structure including a first stair layer and a second stair layer on the first stair layer. The first stair layer comprises a first conductive film. The semiconductor structure includes a landing pad disposed on the first conductive film. The landing pad has a first pad sidewall facing toward the second stair layer, a first lateral gap distance between an upper portion of the first pad sidewall and the second stair layer is smaller than a second lateral gap distance between a lower portion of the first pad sidewall and the second stair layer.
Claims18
A semiconductor structure, comprising:
- a staircase structure comprising a first stair layer and a second stair layer on the first stair layer, wherein the first stair layer comprises a first conductive film;
- and
- a landing pad disposed on the first conductive film,
- wherein the landing pad has a first pad sidewall facing toward the second stair layer, a first lateral gap distance between an upper portion of the first pad sidewall and the second stair layer is smaller than a second lateral gap distance between a lower portion of the first pad sidewall and the second stair layer, wherein the landing pad has a second pad sidewall opposite to the first pad sidewall, the second pad sidewall comprises an inclined sidewall portion.
A semiconductor structure, comprising:
- a staircase structure comprising a first stair layer and a second stair layer on the first stair layer, wherein the first stair layer comprises a first conductive film;
- and
- a landing pad disposed on the first conductive film,
- wherein the landing pad has a first pad sidewall comprising a concave sidewall portion facing toward the second stair layer, wherein the landing pad has a second pad sidewall opposite to the first pad sidewall, the second pad sidewall comprises an inclined sidewall portion.
A semiconductor structure, comprising:
- a staircase structure comprising a stair layer, wherein the stair layer comprises an insulating film and a conductive film on the insulating film, the insulating film and the conductive film has a coplanar stair sidewall;
- and
- a landing pad on the conductive film,
- wherein the landing pad comprises a bottom surface extending beyond the coplanar stair sidewall,
- wherein the landing pad further comprises:
- a first pad sidewall comprising a concave sidewall portion;
- and
- a second pad sidewall opposing to the first pad sidewall and adjacent to the bottom surface of the landing pad.
Dependencies are inferred from the claim text.