Semiconductor structure and manufacturing method thereof

A semiconductor structure, comprising:

• a substrate;
• a semiconductor device disposed at the substrate;
• an interconnect structure disposed on the substrate and electrically connected to the semiconductor device;
• a capacitor disposed on the interconnect structure and electrically connected to the interconnect structure;
• a plurality of first conductive features disposed on the interconnect structure and at one side of the capacitor and electrically connected to the interconnect structure;
• a first isolation layer disposed between the capacitor and one of plurality of the first conductive features which is closest to the capacitor;
• a plurality of second conductive features disposed on the interconnect structure and at another side of the capacitor and electrically connected to the interconnect structure;
• and
• a second isolation layer disposed between the capacitor and one of plurality of the second conductive features which is closest to the capacitor,
• wherein a top electrode of the capacitor has an extension portion located on the first isolation layer and at least the one of the plurality of the first conductive features which is closest to the capacitor, and
• wherein the capacitor, the plurality of first conductive features and the plurality of second conductive features are in contact with a dielectric layer of the interconnect structure.