DRAM chiplet structure and method for manufacturing the same
AssigneeAP Memory Technology Corp.
InventorWenliang Chen
Life of this patent
Estimating the term…
Abstract
A DRAM chiplet structure is provided. The DRAM chiplet structure includes a first hybrid bonding structure, a DRAM interface structure, and a first DRAM core structure. The first hybrid bonding structure has a first surface and a second surface. The DRAM interface structure is in contact with the first surface of the first hybrid bonding structure. The first DRAM core structure is in contact with the second surface of the first hybrid bonding structure. The DRAM interface structure is electrically connected to the first DRAM core structure through the first hybrid bonding structure.
Claims20
A DRAM chiplet structure, comprising:
- a first hybrid bonding structure having a first surface and a second surface;
- a DRAM interface structure in contact with the first surface of the first hybrid bonding structure;
- and
- a first DRAM core structure in contact with the second surface of the first hybrid bonding structure, and the DRAM interface structure is electrically connected to the first DRAM core structure through the first hybrid bonding structure.
A semiconductor structure, comprising:
- at least one DRAM chiplet structure, each comprising:
- a DRAM interface structure;
- and
- at least one DRAM core structure bonded over the DRAM interface structure through a wafer bonding technique;
- and
- a semiconductor die having a logic circuit structure, wherein the semiconductor die is electrically connected to the DRAM chiplet structure through a bonding structure.
A method for manufacturing a DRAM chiplet structure, the method comprising:
- forming a first hybrid bonding layer over a first wafer having a DRAM interface structure;
- forming a second hybrid bonding layer over a second wafer having a first DRAM core structure;
- bonding the first wafer and the second wafer through a hybrid bonding operation to connect the first hybrid bonding layer and the second hybrid bonding layer, thereby obtaining a first bonded wafer, and the DRAM interface structure is electrically connected to the first DRAM core structure through the first hybrid bonding layer and the second hybrid bonding layer;
- and
- singulating the first bonded wafer to obtain a DRAM chiplet structure.
Dependencies are inferred from the claim text.