Integrated passive device (IPD) components and a package and processes implementing the same

An RF transistor package, comprising,

• a metal submount;
• a transistor die mounted to said metal submount;
• a surface mount IPD component mounted to said metal submount, said surface mount IPD component comprising a dielectric substrate comprising a top surface and a bottom surface and at least a first pad and a second pad arranged on a top surface of said surface mount IPD component;
• at least one surface mount device comprising a first terminal and a second terminal, said first terminal of said surface mount device mounted to said first pad and said second terminal mounted to said second pad;
• at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by said dielectric substrate;
• and
• at least one wire bond bonded to at least one of the first pad and the second pad,
• wherein the surface mount IPD component comprises a substrate comprising at least one of the following:
• Alumina, Aluminum Nitride (AlN), and Beryllium oxide (BeO).

A device, comprising:

• a surface mount IPD component configured to be mounted to a metal submount of a transistor package, said surface mount IPD component comprising a dielectric substrate comprising a top surface and a bottom surface and at least a first pad and a second pad arranged on a top surface of said surface mount IPD component;
• at least one surface mount device comprising a first terminal and a second terminal, said first terminal of said surface mount device mounted to said first pad and said second terminal mounted to said second pad;
• and
• at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by said dielectric substrate,
• wherein at least one of the first pad and the second pad are configured as wire bond pads.