Structures and methods for reducing process charging damages

A semiconductor structure, comprising:

• a substrate;
• a polysilicon region extending downward into the substrate;
• an etch stop layer located on the substrate and in contact with the polysilicon region;
• and
• an isolation layer located on the polysilicon region and below the etch stop layer, wherein the isolation layer has an opening through which the etch stop layer is in contact with the polysilicon region.

A method for forming a semiconductor structure, comprising:

• forming a polysilicon region extending downward into a substrate;
• forming an isolation layer on the polysilicon region;
• etching the isolation layer to form an opening;
• and
• depositing an etch stop layer on the substrate and in contact with the polysilicon region through the opening.