Interposer and semiconductor package including the same

A semiconductor package comprising:

• a first package substrate;
• a first semiconductor chip on the first package substrate;
• an interposer substrate comprising a lower surface facing the first package substrate, an upper surface opposite to the lower surface, and an upper conductive pad in the upper surface;
• a first dam structure on the upper surface of the interposer substrate and extending along an edge of the upper conductive pad, the first dam structure including an inner wall defining an opening;
• a first molding layer in contact with an outer wall of the first dam structure and including a lower portion extending under the lower surface of the interposer substrate, a middle portion extending along a sidewall of the interposer substrate, and an upper portion contiguous with the middle portion and extending over the upper surface of the interposer substrate;
• and
• a conductive connector in the opening of the first dam structure such that the conductive connector contacts the upper conductive pad and the inner wall of the first dam structure,
• wherein an upper surface of the conductive connector is higher than at least one of an upper surface of the first dam structure or an upper surface of the first molding layer,
• wherein the first semiconductor chip is provided between the first package substrate and the interposer substrate,
• wherein the first dam structure includes a material different from a material of the first molding layer and a material of the conductive connector,
• wherein the first dam structure includes an insulating material, and
• wherein the upper surface of the first molding layer is coplanar with the upper surface of the first dam structure.