Structure and formation method of semiconductor device with fin structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKun-Yu Lee, Chunyao Wang, Chi On Chui
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Abstract
A structure and formation method of a semiconductor device is provided. The semiconductor device structure includes an epitaxial structure over a semiconductor substrate. The semiconductor device structure also includes a dielectric fin over the semiconductor substrate. The dielectric fin extends upwards to exceed a bottom surface of the epitaxial structure. The dielectric fin has a dielectric structure and a protective shell, and the protective shell extends along sidewalls and a bottom of the dielectric structure. The protective shell has a first average grain size, and the dielectric structure has a second average grain size. The first average grain size is larger than the second average grain size.
Claims20
A method for forming a semiconductor device structure, comprising:
- forming a fin structure over a semiconductor substrate;
- forming an isolation layer over the fin structure and the semiconductor substrate;
- forming a protective layer over the isolation layer;
- forming a dielectric layer over the protective layer;
- and
- partially removing the isolation layer, the protective layer, and the dielectric layer, wherein a remaining portion of the isolation layer forms an isolation structure, remaining portions of the protective layer and the dielectric layer form a dielectric fin, the remaining portion of the protective layer forms a protective shell of the dielectric fin, the remaining portion of the dielectric layer forms a dielectric structure of the dielectric fin, the isolation structure laterally surrounds a lower portion of the fin structure and a lower portion of the dielectric fin, the protective shell has a first dielectric constant, the dielectric structure has a second dielectric constant, the first dielectric constant is higher than the second dielectric constant, the protective shell has a first average grain size, the dielectric structure has a second average grain size, and the first average grain size is larger than the second average grain size.
A method for forming a semiconductor device structure, comprising:
- forming a first fin structure and a second fin structure over a substrate;
- forming a dielectric fin over the substrate, wherein the dielectric fin is between the first fin structure and the second fin structure, the dielectric fin has a dielectric structure and a protective shell, the protective shell extends along sidewalls and a bottom of the dielectric structure, the protective shell has a first dielectric constant, the dielectric structure has a second dielectric constant, and the first dielectric constant is higher than the second dielectric constant;
- removing an upper portion of the dielectric structure;
- and
- forming a protective cap over a remaining portion of the dielectric structure.
A method for forming a semiconductor device structure, comprising:
- forming a first fin structure and a second fin structure over a substrate;
- forming a dielectric fin over the substrate, wherein the dielectric fin is between the first fin structure and the second fin structure, the dielectric fin has a dielectric structure and a protective shell, the protective shell extends along sidewalls and a bottom of the dielectric structure;
- and
- at least partially crystallizing the protective shell to form a crystallized protective shell, wherein the crystallization of the protective layer is performed during the formation of the dielectric layer or the crystallization of the protective layer is performed before the formation of the dielectric layer.
Dependencies are inferred from the claim text.