Semiconductor devices and methods of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Yao Lin, Hsiao Wen Lee, Chih-Han Lin
Life of this patent
Estimating the term…
Abstract
A semiconductor device may be formed by forming a first fin and a second fin in a first area and a second area of a substrate, respectively; which may be followed by forming of a first dummy gate structure and a second dummy gate structure straddling the first fin and second fin, respectively and forming a sacrificial layer extending along a bottom portion of the second dummy gate structure. The first dummy gate structure may be replaced with a first metal gate structure, while the second dummy gate structure and the sacrificial layer may be replaced with a second metal gate structure.
Claims16
A semiconductor device, comprising:
- a substrate including a first area and a second area;
- wherein the semiconductor device in the first area comprises:
- a first fin formed over the substrate and extends along a first direction;
- a first shallow trench isolation (STI) structure, disposed on sides of the first fin along a second direction perpendicular to the first direction, that embeds a lower portion of the first fin;
- and
- a first gate structure having a bottom surface in contact with a first portion of a top surface of the first STI structure;
- wherein the first portion of the top surface of the first STI structure includes a middle recessed portion and side portions laterally aligned with a remaining portion of the top surface of the first STI structure and wherein the bottom surface of the first gate structure is in contact with (a) the middle recessed portion of the first portion of the top surface of the first STI structure and (b) each of the side portions of the first portion of the top surface of the first STI structure, and
- wherein the semiconductor device in the second area comprises:
- a second fin formed over the substrate and extends along the first direction;
- a second shallow trench isolation (STI) structure, disposed on sides of the second fin along the second direction, that embeds a lower portion of the second fin;
- and
- a second gate structure having a bottom surface in contact with a first portion of a top surface of the second STI structure;
- and
- wherein the first portion of the top surface of the second STI structure consists essentially of a recessed portion.
A semiconductor device, comprising:
- a substrate including a first area and a second area;
- wherein the semiconductor device in the first area comprises:
- a first fin that is formed over the substrate and extends along a first direction;
- and
- a first gate structure that straddles the first fin and extends along a second direction perpendicular to the first direction;
- wherein the first gate structure has a bottom surface that includes an extended middle portion adjacent at each end with a flat side portion, wherein the extended middle portion protrudes into a first isolation structure and the flat side portion of each end of the extended middle portion does not protrude into the first isolation structure;
- and
- wherein the semiconductor device in the second area comprises:
- a second fin that is formed over the substrate and extends along the first direction;
- and
- a second gate structure that straddles the second fin and extends along the second direction;
- and
- wherein the second gate structure has a bottom surface that consists essentially of an extended portion that protrudes into second isolation structure over an entire distance between side walls of the second gate structure.
Dependencies are inferred from the claim text.