Localized stress regions for three-dimension chiplet formation

A method, comprising:

• providing a first semiconductor structure having a first circuit and a first wiring structure formed on a first side thereof;
• attaching the first side of the first semiconductor structure to a carrier substrate;
• forming a first stress film on a second side of the first semiconductor structure;
• patterning the first stress film to form a first patterned stress film with at least one recessed region;
• forming a second stress film within the recessed region and on the first patterned stress film;
• polishing the second stress film to planarize the second stress film;
• separating the carrier substrate from the first semiconductor structure;
• cutting the first patterned stress film and the second stress film and the first semiconductor structure to define at least one chiplet;
• and
• bonding the at least one chiplet to a second semiconductor structure that has a second circuit and a second wiring structure such that the second wiring structure is connected to the first wiring structure.