Semiconductor device and method

A method of manufacturing a semiconductor device, the method comprising:

• receiving a first semiconductor device adjacent to a second semiconductor device, wherein a first semiconductor material extends from within the first semiconductor device, between the first semiconductor device and the second semiconductor device, to within the second semiconductor device, the first semiconductor device comprising a first semiconductor die and the second semiconductor device comprising a second semiconductor die;
• chemical mechanical polishing the first semiconductor material to a first thickness of between about 100 μm and about 500 μm, wherein an opposite side of the first semiconductor device from the side being chemically mechanically polished is covered by a backgrinding tape during the chemical mechanical polishing, the backgrinding tape having a planar surface facing the first semiconductor material and extending from a first side of the first semiconductor device to a second side of the first semiconductor device;
• removing the backgrinding tape;
• after the removing the backgrinding tape, cutting the first semiconductor material after the chemical mechanical polishing the first semiconductor material;
• bonding the first semiconductor die to a hydrophilic surface of a third semiconductor die at least partially within a semiconductor wafer to form a chip on wafer structure, the bonding being done after the cutting the first semiconductor material;
• after the bonding, chemical mechanical polishing the first semiconductor material to a second thickness of between about 10 μm and about 250 μm;
• singulating the semiconductor wafer after the chemical mechanical polishing the first semiconductor material to the second thickness;
• and
• bonding the second semiconductor die to a hydrophilic surface of a fourth semiconductor die at least partially within the semiconductor wafer to form a second chip on wafer structure, the bonding being done after the cutting the first semiconductor material, the bonding the first semiconductor die and the bonding the second semiconductor die occurring prior to the chemical mechanical polishing the first semiconductor material to the second thickness, wherein after the bonding the first semiconductor die to the hydrophilic surface of the third semiconductor die a bonding interface between the hydrophilic surface of the third semiconductor die and the first semiconductor die extends to edges of the first semiconductor die but does not extend beyond a semiconductor substrate of the first semiconductor die, the bonding interface having a width less than a semiconductor substrate of the third semiconductor die, the bonding interface terminating at an exposed external sidewall of the first semiconductor die.

A method of manufacturing a semiconductor device, the method comprising:

• manufacturing a first semiconductor device and a second semiconductor device with a semiconductor wafer, the first semiconductor device being a first semiconductor die and the second semiconductor device being a second semiconductor die;
• singulating the first semiconductor device from the second semiconductor device, the semiconductor die comprising a contact pad coplanar with a passivation layer during the singulating, the singulating comprising:
• a first chemical mechanical polishing process with a backgrinding tape protecting the first semiconductor device, a surface of the backgrinding tape in physical contact with contact pads being planar across the contact pads;
• a second chemical mechanical polishing process, wherein the backgrinding tape is removed prior to the second chemical mechanical polishing process;
• a sawing process between the first chemical mechanical polishing process and the second chemical mechanical polishing process, wherein the sawing process occurs while a semiconductor substrate of the semiconductor wafer has a thickness of between about 100 μm and about 500 μm;
• and
• contacting the contact pad and the passivation layer of the first semiconductor die to a third semiconductor die and bonding the second semiconductor die to a fourth semiconductor die, wherein the bonding forms a chip on wafer structure, the bonding occurring after the sawing process and prior to the second chemical mechanical polishing process, wherein a bonding interface between the first semiconductor die and the third semiconductor die is as wide as the first semiconductor die and smaller than a semiconductor substrate of the third semiconductor die, the bonding interface intersecting an exposed external sidewall of the first semiconductor die at a perpendicular angle.