Wrap-around contact structures for semiconductor fins

Abstract

Wrap-around contact structures for semiconductor fins, and methods of fabricating wrap-around contact structures for semiconductor fins, are described. In an example, an integrated circuit structure includes a semiconductor fin having a first portion protruding through a trench isolation region. A gate structure is over a top and along sidewalls of the first portion of the semiconductor fin. A source or drain region is at a first side of the gate structure, the source or drain region including an epitaxial structure on a second portion of the semiconductor fin. The epitaxial structure has substantially vertical sidewalls in alignment with the second portion of the semiconductor fin. A conductive contact structure is along sidewalls of the second portion of the semiconductor fin and along the substantially vertical sidewalls of the epitaxial structure.

Dependencies are inferred from the claim text.