Spin on scaffold film for forming topvia
AssigneeInternational Business Machines Corporation
InventorsSomnath Ghosh, Karen Elizabeth Petrillo, Cody J. Murray, Ekmini Anuja De Silva, Chi-Chun Liu, Dominik Metzler, John Christopher Arnold
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device is provided. The method includes forming a plurality of metal lines on substrate, forming a sacrificial dielectric material layer between the metal lines, forming a hardmask over at least one of the metal lines, etching at least one of the metal lines that is not covered by the hardmask, treating the sacrificial dielectric material layer to soften the layer. The method also includes removing the treated sacrificial dielectric material layer.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- forming a plurality of metal lines on substrate;
- forming a sacrificial dielectric material layer between the metal lines;
- forming a hardmask over at least one of the metal lines;
- etching at least one of the metal lines that is not covered by the hardmask;
- treating the sacrificial dielectric material layer to soften the layer;
- and
- removing the treated sacrificial dielectric material layer.
Dependencies are inferred from the claim text.