Passivation layer for integrated circuit structure and forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chiang Chen, Chun-Ting Wu, Ching-Hou Su, Chih-Pin Wang
Life of this patent
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Abstract
An integrated circuit (IC) structure includes a substrate, a transistor, an interconnect structure, a plurality of metal lines, an oxide liner, a passivation layer, and a nitride layer. The transistor is on the substrate. The interconnect structure is over the transistor. The metal lines is on the interconnect structure. The oxide liner is over the plurality of metal lines. The passivation layer is over the oxide liner and is more porous than the passivation layer. The nitride layer is over the passivation layer.
Claims20
An integrated circuit (IC) structure, comprising:
- a substrate;
- a transistor on the substrate;
- an interconnect structure over the transistor;
- a plurality of metal lines on the interconnect structure;
- an oxide liner over the plurality of metal lines;
- a passivation layer over the oxide liner, the oxide liner being more porous than the passivation layer;
- and
- a nitride layer over the passivation layer.
An integrated circuit (IC) structure, comprising:
- a semiconductor substrate;
- a plurality of first metal lines laterally extending above the semiconductor substrate;
- a plurality of second metal lines laterally extending above the plurality of first metal lines, the plurality of second metal lines each having a thickness about five times greater than a thickness of a topmost one of the plurality of first metal lines;
- an oxide liner over the plurality of second metal lines;
- and
- a passivation structure over the oxide liner and having no interface therein.
An integrated circuit (IC) structure, comprising:
- a semiconductor substrate;
- an interconnect structure over the semiconductor substrate;
- a plurality of metal lines on the interconnect structure;
- a porous liner over the plurality of metal lines;
- a porous-free passivation layer over the porous liner;
- and
- a nitride layer over the porous-free passivation layer.
Dependencies are inferred from the claim text.