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US 11,688,630 B2Granted
Shallow trench isolation filling structure in semiconductor device
AssigneeMicron Technology, Inc.
InventorNobuyoshi Sato
Life of this patent
Estimating the term…
Abstract
Disclosed herein are apparatuses and methods that include a shallow trench isolation filling structure. An example method includes: etching a semiconductor substrate to form a plurality of pillars and a trench therebetween; providing rinse solution in the trench; adding a plurality of insulating particles into the rinse solution; and removing the rinse solution such that the insulating particles and an air gap remains in the trench.
Claims11
A method comprising:
- etching a semiconductor substrate to form a plurality of pillars and a trench therebetween;
- providing rinse solution in the trench;
- adding a plurality of insulating particles into the rinse solution;
- and
- removing the rinse solution such that the insulating particles and an air gap remains in the trench.
2 more elements
A method comprising:
- forming a pillar-shaped structure on a semiconductor substrate, the pillar-shaped structure having a plurality of pillars to form a trench therebetween;
- filling the trench by a solution with a plurality of insulating particles;
- and
- removing the solution such that the insulating particles and an air gap remains in the trench.
1 more element
Dependencies are inferred from the claim text.