Low-temperature method for manufacturing a semiconductor-on-insulator substrate

A method for producing a semiconductor-on-insulator type substrate, comprising:

• successively epitaxially depositing a smoothing layer and a first semiconductor layer on a monocrystalline support substrate to form a donor substrate, the smoothing layer forming an etching barrier layer relative to material of the support substrate;
• producing an assembly by contacting the donor substrate with a receiver substrate;
• transferring, onto the receiver substrate, the first semiconductor layer, the smoothing layer and a portion of the support substrate;
• and
• selectively etching the portion of the support substrate relative to the smoothing layer;
• the method further comprising, after selectively etching the portion of the support substrate, in a same epitaxy frame and without re-venting:
• selectively etching the smoothing layer relative to the first semiconductor layer;
• and
• epitaxially depositing a second semiconductor layer on the first semiconductor layer;
• wherein selectively etching the smoothing layer and epitaxially depositing the second semiconductor layer are carried out at temperatures less than or equal to 500° C.