Method for manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Kai Hsiao, Tsai-Yu Huang, Hui-Cheng Chang, Yee-Chia Yeo
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Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming at least one epitaxial layer over a substrate; forming a mask over the epitaxial layer; patterning the epitaxial layer into a semiconductor fin; depositing a semiconductor capping layer over the semiconductor fin and the mask, wherein the semiconductor capping layer has a first portion that is amorphous on a sidewall of the mask; performing a thermal treatment such that the first portion of the semiconductor capping layer is converted from amorphous into crystalline; forming an isolation structure around the semiconductor fin; and forming a gate structure over the semiconductor fin.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming at least one epitaxial layer over a substrate;
- forming a mask over the epitaxial layer;
- patterning the epitaxial layer into a semiconductor fin;
- depositing a conformal semiconductor capping layer over the semiconductor fin and the mask, wherein the conformal semiconductor capping layer has a first portion that is amorphous on a sidewall of the mask and a second portion that is crystalline on a sidewall of the semiconductor fin;
- performing a thermal treatment such that the first portion of the conformal semiconductor capping layer is converted from amorphous into crystalline;
- forming an isolation structure around the semiconductor fin;
- and forming a gate structure over the semiconductor fin.
A method for manufacturing a semiconductor device, comprising:
- forming at least one epitaxial layer over a substrate;
- patterning the epitaxial layer into a semiconductor fin;
- forming an isolation structure around the semiconductor fin;
- depositing a conformal semiconductor capping layer over the semiconductor fin and the isolation structure, wherein the conformal semiconductor capping layer has a first portion that is amorphous on a top surface of the isolation structure and adjacent to the semiconductor fin;
- performing a thermal treatment such that the first portion of the conformal semiconductor capping layer is converted from amorphous into crystalline;
- and forming a dummy gate structure over the semiconductor fin.
A method for manufacturing a semiconductor device, comprising:
- forming an epitaxial stack over a substrate;
- patterning the epitaxial stack into a semiconductor fin, wherein the semiconductor fin comprises a plurality of first semiconductor layers and a plurality of second semiconductor layers alternatively arranged;
- depositing a conformal semiconductor capping layer on a sidewall of the semiconductor fin;
- annealing the conformal semiconductor capping layer to induce crystallization in the conformal semiconductor capping layer;
- removing the first semiconductor layers from the semiconductor fin;
- and forming a metal gate structure surrounding the second semiconductor layers.
Dependencies are inferred from the claim text.