Semiconductor device and method of forming interposer with opening to contain semiconductor die

A semiconductor device, comprising:

• a stepped substrate including a first layer and a second layer disposed over the first layer, wherein the stepped substrate comprises a first surface, a first step level at a surface of the first layer opposite the first surface, and a second step level at a surface of the second layer offset from the first step level;
• a first semiconductor die disposed over the first step level;
• a first conductive via extending through the stepped substrate to electrically connect to the first semiconductor die;
• a second semiconductor die disposed over the second step level with a surface of the second semiconductor die in contact with a surface of the first semiconductor die;
• a second conductive via extending through the stepped substrate to electrically connect to the second semiconductor die;
• an encapsulant deposited around the first semiconductor die, over the second semiconductor die, and over the stepped substrate;
• and
• a build-up interconnect structure including an insulating layer and conductive layer formed on the first surface of the stepped substrate.

A semiconductor device, comprising:

• a first substrate including a first conductive via formed through the first substrate;
• a first semiconductor die disposed over the first substrate;
• a second substrate disposed over the first substrate and around the first semiconductor die, wherein the second substrate includes a second conductive via formed through the second substrate;
• a second semiconductor die disposed over the second substrate with a surface of the second semiconductor die in contact with a surface of the first semiconductor die;
• an encapsulant deposited around the first semiconductor die, over the second semiconductor die, over the first substrate, and over the second substrate;
• and
• a build-up interconnect structure including an insulating layer and conductive layer formed on a surface of the first substrate.

A semiconductor device, comprising:

• a stepped substrate including a first layer and a second layer disposed over the first layer, wherein the stepped substrate comprises a first surface, a first step level at a surface of the first layer opposite the first surface, and a second step level at a surface of the second layer offset from the first step level;
• a first semiconductor die disposed in an opening of the stepped substrate, wherein the opening in the stepped substrate extends through the stepped substrate;
• a second semiconductor die disposed within the first step level;
• an encapsulant deposited over the second semiconductor die, first step level, and second step level;
• and
• a build-up interconnect structure formed on an active surface of the first semiconductor die opposite the second semiconductor die, and on the first surface of the stepped substrate, wherein the build-up interconnect structure includes,
• (a) an insulating layer formed on the active surface of the first semiconductor die, and on the first surface of the stepped substrate, and
• (b) a conductive layer formed on the insulating layer and on the active surface of the first semiconductor die.