Method for manufacturing a capacitor

A method for manufacturing a capacitor, comprising:

• providing a substrate and a multilayer structure, wherein the multilayer structure comprises a first supporting layer disposed on the substrate, a first stack material layer on the first supporting layer, a second supporting layer on the first stack material layer, a second stack material layer on the second supporting layer, and a third supporting layer on the second stack material layer;
• forming a recess in the multilayer structure;
• forming a first electrode layer on a surface of the recess;
• performing a selective etching treatment to remove the first and second stack material layers;
• exposing the multilayer structure to a protective gas containing hydrogen before performing a selective vapor phase etching treatment to the first electrode layer, such that a protective film is formed on each exposed surface of the first supporting layer, the second supporting layer, and the third supporting layer;
• performing the selective vapor phase etching treatment to the first electrode layer to form a smaller thickness of the first electrode layer;
• and
• forming a dielectric layer and a second electrode layer, wherein the dielectric layer is between the first and second electrode layers.