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US 11,688,607 B2Granted
Slurry
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hung Liao, Chung-Wei Hsu, Tsung-Ling Tsai, Chen-Hao Wu, An-Hsuan Lee, Shen-Nan Lee, Teng-Chun Tsai, Huang-Lin Chao
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Abstract
The present disclosure provides a slurry. The slurry includes an abrasive including a ceria compound; a removal rate regulator to adjust removal rates of the slurry to metal and to dielectric material; and a buffering agent to adjust a pH value of the slurry, wherein the slurry comprises a dielectric material removal rate higher than a metal oxide removal rate.
Claims19
A slurry for planarizing a metal-dielectric surface, comprising:
- an abrasive including a ceria compound, wherein the abrasive consists of ceric hydroxide (Ce(OH)4);
- a removal rate regulator to adjust removal rates of the slurry to metal and to non-metallic dielectric material, wherein the removal rate regulator includes organic acid, the organic acid has a functional group of R-COOH and has a molar mass in a range of 2000 and 8000 g/mol, wherein R represents a carbon chain, and a difference between a non-metallic dielectric material removal rate and a metal removal rate of the slurry is less than 100 angstrom/minute;
- and
- a buffering agent to adjust a pH value of the slurry, wherein the buffering agent includes potassium dihydrogen phosphate (KH2PO4);
- wherein the slurry comprises the non-metallic dielectric material removal rate higher than a metal oxide removal rate.
2 more elements
A slurry, comprising:
- an abrasive having a weight percentage in a range of from 0.05 wt % to 0.10 wt % to the slurry, wherein the abrasive is non-silica based, wherein the abrasive consists of ceric hydroxide (Ce(OH)4);
- a removal rate regulator having a weight percentage more than 0 wt % and no more than 0.60 wt % to the slurry;
- and
- a pH value of the slurry being in a range of from 8.5 to 9;
- wherein the slurry having a metal removal rate greater than a non-metallic dielectric material removal rate, wherein the slurry has a removal rate selectivity of the non-metallic dielectric material to a metal oxide material greater than 40, and a removal rate selectivity of the metal to the metal oxide material greater than 30.
2 more elements
A slurry, comprising:
- an abrasive having a weight percentage in a range from 0.05 wt % to 0.10 wt % to the slurry, wherein the abrasive is non-silica based, wherein the abrasive consists of ceric hydroxide (Ce(OH)4);
- and
- a barrier removal rate enhancer to adjust a non-metallic dielectric material removal rate of the slurry having a weight percentage more than 0 wt % and less than 0.6 wt % to the slurry;
- wherein the slurry comprises a metal removal rate higher than a metal oxide removal rate and the non-metallic dielectric material removal rate, and
- wherein the metal oxide includes at least one of zirconium dioxide (ZrO2), hafnium zirconium oxide (HfZrOx), hafnium silicon oxide (HfSiOx), hafnium silicon oxynitride (HfSiON), zirconium silicon oxide (ZrSiOx), hafnium zirconium silicon oxide (HfZrSiOx), aluminum oxide (Al2O3), hafnium aluminum oxide (HfAlOx), hafnium aluminum nitride (HfAlN), zirconium aluminum oxide (ZrAlOx), lanthanum oxide (La2O3), titanium dioxide (TiO2), ytterbium(III) oxide (Yb2O3), yttrium(III) oxide (Y2O3) and hafnium oxide (HfO2), and x is a positive integer.
2 more elements
Dependencies are inferred from the claim text.