Semiconductor device with two-dimensional materials
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTse-An Chen, Lain-Jong Li
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Abstract
The present disclosure describes a method that includes forming a first two-dimensional (2D) layer on a first substrate and attaching a second 2D layer to a carrier film. The method also includes bonding the second 2D layer to the first 2D layer to form a heterostack including the first and second 2D layers. The method further includes separating the first 2D layer of the heterostack from the first substrate and attaching the heterostack to a second substrate. The method further includes removing the carrier film from the second 2D layer.
Claims20
A method, comprising:
- forming a first two-dimensional (2D) layer on a first substrate;
- attaching a second 2D layer to a carrier film, wherein the second 2D layer comprises a 2D material different from the first 2D layer;
- bonding the second 2D layer to the first 2D layer to form a heterostack comprising the first and second 2D layers;
- separating the heterostack of the first and second 2D layers from the first substrate;
- attaching the heterostack to a second substrate, wherein the first 2D layer is in direct contact with the second substrate;
- and
- removing the carrier film from the second 2D layer.
A method, comprising:
- forming a first two-dimensional (2D) layer on a metal layer;
- depositing a hard mask layer on a second 2D layer;
- attaching a carrier film to the hard mask layer, wherein the hard mask layer is in direct contact with the carrier film and the second 2D layer;
- bonding the second 2D layer to the first 2D layer to form a heterostack comprising the first and second 2D layers;
- separating the first 2D layer of the heterostack from the metal layer;
- attaching the heterostack to a second substrate;
- and
- removing the carrier film and the hard mask layer from the second 2D layer.
A method, comprising:
- forming a first two-dimensional (2D) layer on a substrate;
- bonding a second 2D layer to the first 2D layer, wherein the second 2D layer comprises a 2D material different from the first 2D layer;
- separating the first and second 2D layers from the substrate;
- bonding the first 2D layer to a third 2D layer to form a heterostack comprising the first, second, and third 2D layers;
- and
- forming a transistor, comprising:
- forming first and second source/drain regions extending through the heterostack;
- forming a channel region using a portion of the heterostack between the first and second source/drain regions;
- and
- forming a gate electrode over the channel region.
Dependencies are inferred from the claim text.