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US 11,688,603 B2Granted
Methods of forming silicon germanium structures
AssigneeASM IP Holding B.V.
InventorsRami Khazaka, Lucas Petersen Barbosa Lima
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Abstract
Methods for forming structures that include a layer comprising silicon germanium are disclosed. Exemplary embodiments of the disclosure provide improved methods of forming a transition layer on the layer comprising silicon germanium that can mitigate any formation of an interface layer between the layer comprising silicon germanium and a subsequently formed layer comprising silicon.
Claims20
A method of forming a structure, the method comprising the steps of:
- providing a substrate comprising a layer comprising silicon germanium (SiGe) within a reaction chamber;
- and
- forming a transition layer on the layer comprising SiGe by providing a gas comprising a mixture of:
- a first silicon-containing gas;
- a halogen-containing gas;
- and
- a second silicon-containing gas within the reaction chamber;
- and
- forming a layer comprising silicon overlying the transition layer,
- wherein the first silicon-containing gas is different than the second silicon-containing gas,
- wherein the transition layer provides an abrupt transition between the layer comprising SiGe and the layer comprising silicon, and
- wherein a thickness of the transition layer is between about 0.1 nm and about 5 nm.
9 more elements
A method of forming a structure, the method comprising the steps of:
- providing a substrate within a reaction chamber;
- forming a layer comprising silicon germanium (SiGe) on a surface of the substrate using a silicon-containing precursor;
- forming a transition layer on the layer comprising SiGe by providing a gas comprising a mixture of:
- a first silicon-containing gas;
- a halogen-containing gas;
- and
- a second silicon-containing gas within the reaction chamber;
- and
- forming a monocrystalline silicon layer overlying the transition layer.
6 more elements
Dependencies are inferred from the claim text.