Semiconductor device with electrodes over oxide semiconductor

Abstract

Favorable electrical characteristics are provided to a semiconductor device, or a semiconductor device with high reliability is provided. A semiconductor device including a bottom-gate transistor with a metal oxide in a semiconductor layer includes a source region, a drain region, a first region, a second region, and a third region. The first region, the second region, and the third region are each sandwiched between the source region and the drain region along the channel length direction. The second region is sandwiched between the first region and the third region along the channel width direction, the first region and the third region each include the end portion of the metal oxide, and the length of the second region along the channel length direction is shorter than the length of the first region or the length of the third region along the channel length direction.

Dependencies are inferred from the claim text.