Performing read operation prior to two-pass programming of storage system
AssigneeMicron Technology, Inc.
InventorYang Zhang
Life of this patent
Estimating the term…
Abstract
Data from a first memory cell of a plurality of memory cells is read, and it is determined whether the data stored at the first memory cell comprises an error. Upon determining that the data stored at the first memory cell comprises the error, it is determined whether an error correction operation on the data stored at the first memory cell is successful. Responsive to determining that the error correction operation on the data stored at the first memory cell is unsuccessful, a second memory cell of the plurality of memory cells is identified and a two-pass programming operation is performed on the second memory cell instead of the first memory cell.
Claims20
A system comprising:
- a memory;
- and
- a processing device, operatively coupled with the memory, to:
- read data from a first memory cell of a plurality of memory cells;
- determine whether the data stored at the first memory cell comprises an error;
- upon determining that the data stored at the first memory cell comprises the error, determine whether an error correction operation on the data stored at the first memory cell is successful;
- and
- responsive to determining that the error correction operation on the data stored at the first memory cell is unsuccessful:
- identify a second memory cell of the plurality of memory cells;
- and
- perform, by a processing device, a two-pass programming operation on the second memory cell instead of the first memory cell.
A method comprising:
- reading data from a first memory cell of a plurality of memory cells;
- determining whether the data stored at the first memory cell comprises an error;
- upon determining that the data stored at the first memory cell comprises the error, determining whether an error correction operation on the data stored at the first memory cell is successful;
- and
- responsive to determining that the error correction operation on the data stored at the first memory cell is unsuccessful:
- identifying a second memory cell of the plurality of memory cells;
- and
- performing, by a processing device, a two-pass programming operation on the second memory cell instead of the first memory cell.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
- reading data from a first memory cell of a plurality of memory cells;
- determining whether the data stored at the first memory cell comprises an error;
- upon determining that the data stored at the first memory cell comprises the error, determining whether an error correction operation on the data stored at the first memory cell is successful;
- and
- responsive to determining that the error correction operation on the data stored at the first memory cell is unsuccessful:
- identifying a second memory cell of the plurality of memory cells;
- and
- performing, by a processing device, a two-pass programming operation on the second memory cell instead of the first memory cell.
Dependencies are inferred from the claim text.