Vertical string driver for memory array
AssigneeMicron Technology, Inc.
InventorsAaron S. Yip, Tomoko Ogura Iwasaki
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Abstract
A memory device comprises a substrate and a memory array disposed above the substrate, the memory array comprising a plurality of vertically stacked layers, each vertically stacked layer comprising a plurality of word lines. The memory device further comprises a plurality of vertical string driver circuits disposed above the memory array, wherein each of the plurality of vertical string driver circuits comprises one or more semiconductor devices coupled to a respective one of the plurality of word lines.
Claims18
A memory device comprising:
- a substrate;
- a memory array disposed above the substrate, the memory array comprising a plurality of vertically stacked layers, each vertically stacked layer comprising a plurality of word lines;
- and
- a plurality of vertical string driver circuits disposed above the memory array, wherein each of the plurality of vertical string driver circuits comprises a plurality of semiconductor devices coupled in series to a respective one of the plurality of word lines.
A method of performing a memory access operation on a memory device, the method comprising:
- receiving a request to perform the memory access operation on the memory device, the memory device comprising a memory array comprising a plurality of vertically stacked layers, each vertically stacked layer comprising a plurality of word lines;
- causing an operation voltage signal to be applied to a bit line of a plurality of bit lines of the memory array;
- and
- causing an access voltage signal to be applied to a word line of the plurality of word lines via a vertical string driver circuit of a plurality of vertical string driver circuits disposed above the memory array, wherein each of the plurality of vertical string driver circuits comprises a plurality of semiconductor devices coupled in series to a respective one of the plurality of word lines.
Dependencies are inferred from the claim text.