Memory management for charge leakage in a memory device
AssigneeMicron Technology, Inc.
InventorAngelo Visconti
Life of this patent
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Abstract
Methods, systems, and devices for memory management associated with charge leakage in a memory device are described. A memory device may identify a charge leakage associated with one or more memory cells or access lines, and may determine whether to invert a logic state stored by a memory cell or a set of memory cells to improve the likelihood that the memory cells are read properly in the presence of charge leakage. In some examples, the memory device may also store an indication that the complement of the detected logic state was written, such as a bit flip indication, which may correspond to one memory cell or a set of memory cells.
Claims16
An apparatus comprising:
- a plurality of memory cells each including a respective storage element;
- and
- a controller coupled with the plurality of memory cells and configured to:
- couple the storage element of each of the plurality of memory cells with a respective one of a plurality of access lines;
- determine, after determining a respective logic state stored by each of the plurality of memory cells based at least in part on the coupling, whether a threshold amount of charge leakage is detected on one or more of the plurality of access lines;
- select, based at least in part on whether the threshold amount of charge leakage is detected on the one or more of the plurality of access lines, a direct rewrite operation for each of the plurality of memory cells or a complementary rewrite operation for each of the plurality of memory cells;
- and
- perform the selected direct rewrite operation or complementary rewrite operation on each of the plurality of memory cells.
A method comprising:
- coupling a storage element of each of a plurality of memory cells with a respective one of a plurality of access lines;
- determining, after determining a respective logic state stored by each of the plurality of memory cells based at least in part on the coupling, whether a threshold amount of charge leakage is detected on one or more of the plurality of access lines;
- selecting, based at least in part on whether the threshold amount of charge leakage is detected on the one or more of the plurality of access lines, a direct rewrite operation for each of the plurality of memory cells or a complementary rewrite operation for each of the plurality of memory cells;
- and
- performing the selected direct rewrite operation or complementary rewrite operation on each of the plurality of memory cells.
Dependencies are inferred from the claim text.