Method and system for correcting lithography process hotspots based on stress damping adjustment

A system for correcting lithography process hotspots based on stress damping adjustment, comprising:

• a hotspot acquisition unit, configure to acquire a mark hotspot of a mask pattern;
• an area segmentation unit, configured for forming N concentric closed patterns centered on the mark hotspot, wherein the N concentric closed patterns form N annuli with gradually increasing numbers of rings from inner to outer on a mask;
• a moving unit, configured for moving vertexes of the mask pattern located in each annulus by a specific distance in a direction deviating from the mark hotspot and connecting the moved vertexes according to an original connection relationship to acquire an updated layout, wherein moving distances of the vertexes decrease as the numbers of rings of the annuli increase, and the specific distance does not exceed a tolerable deviation of a layout electrical design;
• and
• a verification unit, configured for verifying electrical characteristics of the updated layout, determining whether a deviation of the electrical characteristics of the updated layout is within a tolerable range, and performing geometric correction to compensate for a deviation of electrical parameters if no is determined and then ending correction, or ending the correction if yes is determined.