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US 11,687,444 B2Granted
Data managing method. memory controlling circuit unit and memory storage device
AssigneePhison Electronics Corp.
InventorChih-Kang Yeh
Life of this patent
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Abstract
A data managing method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: receiving a write command for writing a plurality of first data into a rewritable non-volatile memory module; when the plurality of first data are continuous data, writing the plurality of first data respectively into a plurality of first physical erasing units by using a single-page programming mode, and recording first management information corresponding to the plurality of first physical erasing units; and when the plurality of first data are not the continuous data, writing the plurality of first data respectively into a plurality of second physical erasing units by using the single-page programming mode.
Claims12
A data managing method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module has a plurality of physical erasing units, and the memory managing method comprises:
- receiving a write command for writing a plurality of first data into the rewritable non-volatile memory module;
- only when the plurality of first data are continuous data, writing the plurality of first data respectively into a plurality of first physical erasing units among the plurality of physical erasing units by using a single-page programming mode, and recording first management information to identify the plurality of first physical erasing units for storing the plurality of first data, wherein a plurality of logical addresses of the plurality of first data are continuous and the step of recording first management information to identify the plurality of first physical erasing units for storing the plurality of first data comprises:
- recording an order of the plurality of first data;
- when a valid data merging operation is performed, identifying the plurality of first physical erasing units respectively storing the plurality of first data from the plurality of physical erasing units according to the first management information;
- copying the plurality of first data from the plurality of first physical erasing units, and writing the plurality of first data into a third physical erasing unit among the plurality of physical erasing units by using a multi-page programming mode;
- and
- when the plurality of first data are not the continuous data, writing the plurality of first data respectively into a plurality of second physical erasing units among the plurality of physical erasing units by using the single-page programming mode.
4 more elements
A memory controlling circuit unit for controlling a rewritable non-volatile memory module, the memory controlling circuit unit comprising:
- a host interface, configured to couple to a host system,
- a memory interface, configured to couple to the rewritable non-volatile memory module, wherein the rewritable non-volatile memory module has a plurality of physical erasing units;
- a memory management circuit, coupled to the host interface and the memory interface,
- wherein the memory management circuit is configured to receive a write command for writing a plurality of first data into the rewritable non-volatile memory module;
- only when the plurality of first data are continuous data, the memory management circuit is further configured to write the plurality of first data respectively into a plurality of first physical erasing units among the plurality of physical erasing units by using a single-page programming mode, and record first management information to identify the plurality of first physical erasing units for storing the plurality of first data, wherein a plurality of logical addresses of the plurality of first data are continuous and in the operation of recording the first management information corresponding to the plurality of first physical erasing units,
- the memory management circuit is further configured to record an order of the plurality of first data,
- when a valid data merging operation is performed, the memory management circuit is further configured to identify the plurality of first physical erasing units respectively storing the plurality of first data from the plurality of physical erasing units according to the first management information,
- the memory management circuit is further configured to copy the plurality of first data from the plurality of first physical erasing units, and write the plurality of first data into a third physical erasing unit among the plurality of physical erasing units by using a multi-page programming mode, and
- when the plurality of first data are not the continuous data, the memory management circuit is further configured to write the plurality of first data respectively into a plurality of second physical erasing units among the plurality of physical erasing units by using the single-page programming mode.
6 more elements
A memory storage device, comprising:
- a connection interface unit, configured to couple to a host system;
- a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module has a plurality of physical erasing units;
- and
- a memory controlling circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
- wherein the memory controlling circuit unit is configured to receive a write command for writing a plurality of first data into the rewritable non-volatile memory module;
- only when the plurality of first data are continuous data, the memory controlling circuit unit is further configured to write the plurality of first data respectively into a plurality of first physical erasing units among the plurality of physical erasing units by using a single-page programming mode, and record first management information to identify the plurality of first physical erasing units for storing the plurality of first data, wherein a plurality of logical addresses of the plurality of first data are continuous and in the operation of recording the first management information corresponding to the plurality of first physical erasing units,
- the memory controlling circuit unit is further configured to record an order of the plurality of first data,
- when a valid data merging operation is performed, the memory controlling circuit unit is further configured to identify the plurality of first physical erasing units respectively storing the plurality of first data from the plurality of physical erasing units according to the first management information,
- the memory controlling circuit unit is further configured to copy the plurality of first data from the plurality of first physical erasing units, and write the plurality of first data into a third physical erasing unit among the plurality of physical erasing units by using a multi-page programming mode, and
- when the plurality of first data are not the continuous data, the memory controlling circuit unit is further configured to write the plurality of first data respectively into a plurality of second physical erasing units among the plurality of physical erasing units by using the single-page programming mode.
7 more elements
Dependencies are inferred from the claim text.