Method for improve read disturbance phenomenon of flash memory module and associated flash memory controller and electronic device

A flash memory controller, wherein the flash memory controller is configured to access a flash memory module, the flash memory module comprises a plurality of blocks, each of the plurality of blocks comprises a plurality of pages, and the flash memory controller comprises:

• a read only memory (ROM), arranged to store a program code;
• a microprocessor, configured to execute the program code to control the access of the flash memory module;
• wherein the microprocessor is configured to select a first block, read at least a portion of the pages of the first block and determining a bit error rate or a bit error count of each page;
• and for each of the at least the portion of the pages of the first block, if the bit error rate or the bit error count of the page is not greater than a first threshold value, the microprocessor moves the data of the page into a second block;
• and for each of the at least the portion of the pages of the first block, if the bit error rate or the bit error count of the page is greater than the first threshold value, the microprocessor moves the data of the page into a third block;
• and a number of pages corresponding to a word line of the second block is less than a number of pages corresponding to a word line of the third block.

An electronic device, comprising:

• a flash memory module, where the flash memory module comprises a plurality of blocks, and each of the plurality of blocks comprises a plurality of pages;
• and
• a flash memory controller, configured to select a first block, and read at least a portion of the pages of the first block and determining a bit error rate or a bit error count of each page;
• and for each of the at least the portion of the pages of the first block, if the bit error rate or the bit error count of the page is not greater than a first threshold value, the flash memory controller moves the data of the page into a second block;
• and for each of the at least the portion of the pages of the first block, if the bit error rate or the bit error count of the page is greater than the first threshold value, the flash memory controller moves the data of the page into a third block;
• and a number of pages corresponding to a word line of the second block is less than a number of pages corresponding to a word line of the third block.