Method for manufacturing a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorJeong-Hun Seo
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor device includes designing a layout, manufacturing a photomask based on the designed layout, and performing a photolithography process using the photomask to form a pattern on a substrate. The manufacturing of the photomask includes preparing the photomask including first and second chip regions, extracting first and second images from the first and second chip regions, respectively, averaging the first and second images to generate a preliminary standard image including a difference region between the first and second images, inserting a normal image into the difference region based on the layout to generate a standard image, and comparing each of the first and second images with the standard image to detect a defect of the first and/or second chip regions.
Claims14
A method for manufacturing a semiconductor device, the method comprising:
- designing a layout;
- manufacturing a photomask based on the layout;
- inspecting the photomask;
- and
- performing a photolithography process using the photomask to form a pattern on a substrate,
- wherein the inspecting of the photomask comprises:
- extracting a first image and a second image from a first chip region and a second chip region of the photomask, respectively;
- averaging the first and second images to generate a preliminary standard image comprising a blank region;
- extracting a region of the preliminary standard image as a patch;
- and
- inserting the patch into the blank region to generate a standard image.
A method for manufacturing a semiconductor device, the method comprising:
- designing a layout comprising a first layout pattern and a second layout pattern;
- manufacturing a photomask comprising a first chip region and a second chip region based on the layout, wherein each of the first and second chip regions comprises first and second mask patterns corresponding to the first and second layout patterns, respectively;
- inspecting the photomask;
- and
- performing a photolithography process using the photomask to form a pattern on a substrate,
- wherein the inspecting of the photomask comprises:
- extracting first and second images from the first and second chip regions, respectively, wherein each of the first and second images comprises first and second image patterns corresponding to the first and second mask patterns, respectively;
- averaging the first and second images to generate a preliminary standard image comprising a difference region, the difference region corresponding to the first image pattern;
- extracting a patch corresponding to the second image pattern of the preliminary standard image;
- and
- inserting the patch into the difference region to generate a standard image.
Dependencies are inferred from the claim text.