Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process

A method of depositing a ruthenium-containing film on a substrate by a cyclical deposition process, the method comprising:

• contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of platinum, palladium, aluminum, titanium, bismuth, zinc, and combinations thereof,
• contacting the substrate with a fourth vapor phase reactant comprising an additional organic precursor after contacting the substrate with the first vapor phase reactant,
• contacting the substrate with an oxygen containing plasma after contacting the substrate with the first vapor phase reactant, and
• contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide after contacting the substrate with an oxygen containing plasma,
• wherein the ruthenium-containing film comprises at least one of a ruthenium-platinum alloy, a ruthenium-palladium alloy, or a ternary ruthenium oxide.