Vapor deposition apparatus and techniques using high purity polymer derived silicon carbide
AssigneePallidus, Inc.
InventorMark S. Land
Life of this patent
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Abstract
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.
Claims22
A method of making boule for the production of a 4H N-Type silicon carbide wafer, having a diameter of from about 6 inches to about 10 inches, the wafer characterized with properties comprising:
- type/dopant:N/nitrogen;
- orientation:<0001>4.0°±0.5°;
- thickness:
- about 300 to about 800 μm;
- and,
- micropipe density of <1 cm−2;
- and,
- the method comprising the steps of:
- forming a vapor of a polymer derived ceramic SiC starting material, wherein the polymer derived ceramic SiC starting material has a purity of at least about 6 nines, and is oxide layer free;
- depositing the vapor on a seed crystal to form a boule;
- and providing the boule to a wafer manufacturing process.
A method of making a 4H silicon carbide wafer, the method comprising the steps of forming a vapor of a polymer derived ceramic SiC, the polymer derived ceramic having a purity of at least about 6 nines, and being oxide layer free, depositing the vapor on a seed crystal to form a boule, and providing the boule to a wafer manufacturing process, wherein the boule has a diameter of from about 6 inches to about 10 inches.
A method of making boule for the production of a 4H N-Type silicon carbide wafer, having a diameter of from about 4 inches to about 10 inches, the wafer characterized with properties comprising:
- type/dopant:N/nitrogen;
- orientation:<0001>4.0°±0.5°;
- thickness:
- about 300 to about 800 μm;
- and,
- micropipe density of <1 cm−2;
- and,
- RT:0.01-40 Ω·cm;
- and,
- Bow/Warp/TTV<45 μm;
- the method comprising the steps of:
- forming a vapor of a polymer derived ceramic SiC starting material;
- wherein the polymer derived ceramic SiC starting material has a purity of at least about 6 nines;
- depositing the vapor on a seed crystal to form a boule;
- and providing the boule to a wafer manufacturing process.
A method of making boule for the production of a 4H N-Type silicon carbide wafer, having a diameter of from about 8 inches to about 12 inches, the wafer characterized with properties comprising:
- type/dopant:N/nitrogen;
- orientation:<0001>4.0°±0.5°;
- thickness:
- about 300 to about 800 μm;
- and,
- micropipe density of <1 cm−2;
- and,
- the method comprising the steps of:
- forming a vapor of a polymer derived ceramic SiC starting material, wherein the polymer derived ceramic SiC starting material has a purity of at least about 6 nines, and is oxide layer free;
- depositing the vapor on a seed crystal to form a boule;
- and providing the boule to a wafer manufacturing process.
A method of making a 4H silicon carbide wafer, the method comprising the steps of forming a vapor of a polymer derived ceramic SiC, the polymer derived ceramic having a purity of at least about 6 nines, and being oxide layer free, depositing the vapor on a seed crystal to form a boule, and providing the boule to a wafer manufacturing process, wherein the boule has a diameter of from about 8″ to about 12″.
A method of making boule for the production of a 4H N-Type silicon carbide wafer, having a diameter of from about 8 inches to about 12 inches, the wafer characterized with properties comprising:
- type/dopant:N/nitrogen;
- orientation:<0001>4.0°±0.5°;
- thickness:
- about 300 to about 800 μm;
- and,
- micropipe density of <1 cm−2;
- and,
- RT:0.01-40 Ω·cm;
- and,
- Bow/Warp/TTV<45 μm;
- the method comprising the steps of:
- forming a vapor of a polymer derived ceramic SiC starting material;
- wherein the polymer derived ceramic SiC starting material has a purity of at least about 6 nines;
- depositing the vapor on a seed crystal to form a boule;
- and providing the boule to a wafer manufacturing process.
Dependencies are inferred from the claim text.